Method for forming electrical contact to the optical coating of

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257437, 257444, 257448, 257459, 250332, 2503384, H01L 310232

Patent

active

056082541

ABSTRACT:
This is a system and method of forming an electrical contact to the optical coating of an infrared detector using conductive epoxy. The method may comprise: forming thermal isolation trenches 22 and bias contact vias 23 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing conductive epoxy 50 into the bias contact vias 23; replanarizing; depositing a common electrode layer 31 over the thermal isolation trenches 22 and vias 23; depositing an optical coating 26 above the common electrode layer 31; mechanically polishing a backside of the substrate 20 to expose the trench filler 24 and conductive epoxy 50; depositing a contact metal 34 on the backside of the substrate 20; etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20.

REFERENCES:
patent: 4740700 (1988-04-01), Shaham et al.
patent: 5047644 (1991-09-01), Meissner et al.
patent: 5426304 (1995-06-01), Belcher et al.
patent: 5485010 (1996-01-01), Owen et al.

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