Coating processes – Coating by vapor – gas – or smoke – Metal coating
Reexamination Certificate
2005-02-01
2005-02-01
Chen, Bret (Department: 1762)
Coating processes
Coating by vapor, gas, or smoke
Metal coating
C427S255394, C427S255700, C427S343000
Reexamination Certificate
active
06849298
ABSTRACT:
A method for forming a diffusion barrier layer of a semiconductor device by using an Atomic Layer Deposition (ALD) is disclosed, which, in a method for forming a diffusion barrier layer on an entire surface of a semiconductor substrate before forming a metal pipe connected with the semiconductor substrate through a contact hole, the contact hole being formed to expose one region of the semiconductor substrate by selectively removing an insulating interlayer on the semiconductor substrate, the method includes the steps of forming Ti/TiN layers without being exposed to the air by alternately providing a precursor set by using an atomic layer deposition (ALD) and many kinds of reacting gases, performing a silane treatment on the TiN layer, and forming a Ti thin layer by the ALD.
REFERENCES:
patent: 6139700 (2000-10-01), Kang et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6534404 (2003-03-01), Danek et al.
patent: 6566283 (2003-05-01), Pangrle et al.
patent: 6627523 (2003-09-01), Pyo
Birch Stewart Kolasch & Birch, LLP.
Chen Bret
Hynix / Semiconductor Inc.
LandOfFree
Method for forming diffusion barrier film of semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming diffusion barrier film of semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming diffusion barrier film of semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3490970