Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1997-08-18
1999-11-02
Chaudhari, Chandra
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
438426, 438431, H01L 21306
Patent
active
059769475
ABSTRACT:
A method used during the formation of a semiconductor device comprises the steps of providing a semiconductor substrate assembly having at least one recess therein then forming a first dielectric layer within the recess. The first dielectric layer is formed with a thickness that will prevent the first dielectric layer from impinging on itself in the recess, for example with a thickness less than half a width of the trench. The dielectric layer is then annealed in a manner that will increase the volume of the first dielectric layer. After annealing the first dielectric layer, a second dielectric layer is formed over the first dielectric layer within the recess. The second dielectric layer is formed with a sufficient thickness such that it impinges on itself in the recess. The second dielectric layer is then annealed. Forming the dielectric layer within the recess using two or more deposition steps, and annealing between each deposition, reduces stresses to the substrate assembly and to the dielectric layer itself which can result in problems during subsequent processing.
REFERENCES:
patent: 4666566 (1987-05-01), Fulton et al.
patent: 5346584 (1994-09-01), Nasr et al.
S. Wolf Silicon Processing for the Vsli Era vol. 2 Lattice Press p. 68, 1990.
Blum David S
Chaudhari Chandra
Micro)n Technology, Inc.
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