Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-11-08
2005-11-08
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S431000, C438S435000
Reexamination Certificate
active
06962856
ABSTRACT:
A method for forming a device isolation film of a semiconductor device, wherein an annealing process is performed on the oxide film using NH3 prior to the deposition of a liner nitride film and after the deposition of a thermal oxide film on a sidewall of a trench to nitridate the oxide film is disclosed. The method comprises the steps of: (a) sequentially forming a pad oxide film and a pad nitride film on a semiconductor substrate; (b) selectively etching the pad nitride film to form a nitride film pattern; (c) etching the pad oxide film and a predetermined thickness of the semiconductor substrate using the nitride film pattern as a hard mask to form a trench; (d) forming a thermal oxide film on the surface of the trench; (e) performing an annealing process under NH3 atmosphere to form an oxide nitride film on the surface of the thermal oxide film; (f) forming a liner nitride film on the entire surface; (g) forming an oxide film filling the trench on the entire surface; and (h) performing a planarization process.
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Lee Tae Hyeok
Park Cheol Hwan
Park Dong Su
Woo Sang Ho
Gurley Lynne A.
Hynix / Semiconductor Inc.
Isaac Stanetta
Jacobson & Holman PLLC
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