Method for forming deposited film containing group III or V elem

Details Method for forming deposited film containing group III or V elem Method for forming deposited film containing group III or V elem

1986-12-16

1989-03-14

Childs, Sadie

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

427255, 4272552, 437225, 437234, 437236, C23C 1600

Patent

active

048123315

ABSTRACT:
A method for forming a deposited film, which comprises introducing gaseous starting materials, containing group III and/or group V compound as the constituent element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film of a substrate existing in a film-forming space with the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

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