Method for forming deposited film by separately introducing an a

Details Method for forming deposited film by separately introducing an a Method for forming deposited film by separately introducing an a

1995-01-12

1995-12-19

Utech, Benjamin

Coating processes

Direct application of electrical, magnetic, wave, or...

Chemical vapor deposition

427586, 427595, 4272552, B05D 308

Patent

active

054766940

ABSTRACT:
A method for forming a deposition film, comprising decomposing a first compound containing germanium and halogen in an activation chamber by applying an energy to form an active species; separately introducing, into a film-forming chamber for forming a deposition film on a substrate, a second compound containing silicon and hydrogen and the active species, which is capable of chemical interaction with the second compound containing silicon and hydrogen; and applying to a mixture of the second compound and the active species at least one excitation energy selected from optical, thermal and discharge energies to excite the second compound in the mixture, thereby facilitating the formation of a deposition film on the substrate.

REFERENCES:
patent: 4051382 (1977-09-01), Ogawa et al.
patent: 4217374 (1987-05-01), Ovshinsky et al.
patent: 4282267 (1981-08-01), Kuyel
patent: 4471042 (1984-09-01), Komatsu
patent: 4517223 (1985-05-01), Ovshinsky et al.
patent: 4526805 (1985-07-01), Yoshizawa
Janai et al "Chemical Vapor Deposition of Amorphous Silicon Prepared from SiF.sub.2 Gas", J. Appl. Phys. 52 (5), May 1981 pp. 3622-3624.

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