Method for forming deposited film by generating precursor with h

Details Method for forming deposited film by generating precursor with h Method for forming deposited film by generating precursor with h

1986-12-16

1989-08-29

Childs, Sadie L.

Coating processes

Electrical product produced

Fluorescent or phosphorescent base coating

427 70, 427250, 427252, 427253, 427255, 4272552, B05D 506, B05D 512, C23C 1642

Patent

active

048616230

ABSTRACT:
A method for forming a deposited film comprises introducing a gaseous starting material containing silicon and/or germanium atoms; a starting material containing at least one member selected from the group consisting of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta), which is capable of being converted to gaseous state; and a gaseous halogenic oxidizing agent which exerts an oxidative effect on the said starting materials for film formation, into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursors of said percursors as the feeding source for the constituent element of the deposited film.

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