Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Patent
1995-03-20
2000-06-20
Nelms, David
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
438 17, 438 18, 438662, 438788, 438798, G01R 3126
Patent
active
060777184
ABSTRACT:
A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.
REFERENCES:
patent: 4058430 (1977-11-01), Suntola
patent: 4183780 (1980-01-01), McKenna
patent: 4213801 (1980-07-01), Johnston, Jr.
patent: 4433951 (1984-02-01), Koch
patent: 4435445 (1984-03-01), Allred
patent: 4488506 (1984-12-01), Heinecke
patent: 4522674 (1985-06-01), Ninomiya
patent: 4525376 (1985-06-01), Edgerton
patent: 4569855 (1986-02-01), Matsuda
patent: 4624736 (1986-11-01), Gee
patent: 4625678 (1986-12-01), Shioya
patent: 4640221 (1987-02-01), Barbee
patent: 4645687 (1987-02-01), Donnelly
patent: 4657617 (1987-04-01), Johnson
patent: 4659401 (1987-04-01), Reif
patent: 4668337 (1987-05-01), Sekine
patent: 4687544 (1987-08-01), Bersinn
patent: 4716852 (1988-01-01), Tsujii
patent: 4726963 (1988-02-01), Ishihara
patent: 4772485 (1988-09-01), Ebata
patent: 4885260 (1989-12-01), Ban et al.
Nishizawa, Oyo Buturi, vol. 53, No. 6, 1984 pp 516-520.
Hirai Yutaka
Sano Masafumi
Takasu Katsuji
Tsuda Hisanori
Berry Renee R.
Canon Kabushiki Kaisha
Nelms David
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