Method for forming deposited film

Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed

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438 17, 438 18, 438662, 438788, 438798, G01R 3126

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active

060777184

ABSTRACT:
A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.

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Nishizawa, Oyo Buturi, vol. 53, No. 6, 1984 pp 516-520.

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