Method for forming deposited film

Details Method for forming deposited film Method for forming deposited film

1985-10-11

1990-05-01

Bell, Janyce

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 531, 427 541, 427 74, 427234, 427235, B05D 306

Patent

active

049217224

ABSTRACT:
A method for forming a deposited film by forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si.sub.n H.sub.m wherein n is an integer of 1 or more, and m is an integer of 2 or more in a chamber housing a substrate therein and forming a deposited film containing silicon on said substrate by excitation of said compound to effect decomposition or polymerization thereof comprises introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy, thereby exciting said compound to effect decomposition or polymerization thereof.

REFERENCES:
patent: 4448801 (1984-05-01), Fukuda
patent: 4459163 (1984-07-01), MacDiarmid
patent: 4532199 (1985-07-01), Ueno
patent: 4544423 (1985-10-01), Tsuge
patent: 4546008 (1985-10-01), Saitoh
patent: 4569855 (1986-02-01), Matsuda
patent: 4585671 (1986-04-01), Kitagawa
patent: 4657777 (1987-04-01), Hirooka
patent: 4759947 (1988-07-01), Ishihara et al.

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