Method for forming deposited film

Coating processes – Electrical product produced – Fluorescent or phosphorescent base coating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427 70, 427255, 4272551, 4272552, 437225, B05D 506, B05D 512, C23C 1600

Patent

active

048185647

ABSTRACT:
A method for forming a deposited film comprises introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.

REFERENCES:
patent: Re31708 (1984-10-01), Gordon
patent: 3473978 (1969-10-01), Jackson et al.
patent: 3888705 (1975-06-01), Fletcher et al.
patent: 4146657 (1979-03-01), Gordon
patent: 4239811 (1980-12-01), Kemlage
patent: 4357179 (1982-11-01), Adams et al.
patent: 4402762 (1983-09-01), John et al.
patent: 4421592 (1983-12-01), Shuskus et al.
patent: 4448801 (1984-05-01), Fukuda et al.
patent: 4462847 (1984-07-01), Thompson et al.
patent: 4504518 (1985-03-01), Dushinsky et al.
patent: 4522663 (1985-06-01), Dushinsky et al.
patent: 4554180 (1985-11-01), Hirooka
patent: 4615905 (1986-10-01), Dushinsky et al.
patent: 4624736 (1986-11-01), Gee et al.
patent: 4624906 (1986-11-01), Kawamura et al.
patent: 4637938 (1987-01-01), Lee et al.
patent: 4645689 (1987-02-01), Cox
patent: 4652463 (1987-03-01), Peters
patent: 4657777 (1987-04-01), Hirooka
patent: 4689093 (1987-08-01), Ishihara et al.
Ohnishi et al., Proceedings, 6th E.C. Photovoltaic Solar Energy Conference, London, Apr. 15-19, 1985.
Sakai et al., Proceedings, 6th E.C. Photovoltaic Solar Energy Conference, London, Apr. 15-19, 1985.
Brodsky, et al., 22 IBM Technical Disclosure Bulletin 3391 (Jan. 1980).
Inoue, Appl. Phys. Lett. 43(8), 15 Oct. 83, p. 774.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming deposited film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming deposited film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming deposited film will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-179255

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.