Method for forming deep trench isolation and related structure

Details Method for forming deep trench isolation and related structure Method for forming deep trench isolation and related structure

2006-03-21

2006-03-21

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S430000, C438S432000, C438S439000, C438S444000, C438S700000, C438S361000

Reexamination Certificate

active

07015115

ABSTRACT:
According to one embodiment, a structure comprises a substrate and a field oxide region, where the field oxide region has a top surface, and where the top surface of the field oxide region comprises substantially no cavities caused by lateral etching. The structure further comprises a trench situated in the substrate, where the trench has a first sidewall and a second sidewall in the substrate, and where the trench is situated directly underneath the field oxide region. According to this embodiment, the trench is used as a deep trench isolation region in the substrate and is typically filled with polysilicon. A thermally grown oxide liner is situated on the first and the second sidewalls of the trench, where the oxide liner is formed after removal of a hard mask. The hard mask may be densified TEOS oxide or HDP oxide and may be removed in an anisotropic dry etch process.

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