Method for forming deep isolation in imagers

Details Method for forming deep isolation in imagers Method for forming deep isolation in imagers

2010-11-09

2011-11-01

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE33076

Reexamination Certificate

active

08048711

ABSTRACT:
An image sensor having an imaging area that includes a substrate layer and a plurality of pixels formed therein. Multiple pixels each include a photodetector formed in the substrate layer. Isolation layers are formed in the substrate layer by performing a series of implants of one or more dopants of a first conductivity type into the substrate layer. Each isolation layer implant is performed with a different energy than the other isolation layer implants in the series and each implant implants the one or more dopants into the entire imaging area. The photodetectors are formed in the substrate layer by performing a series of implants of one or more dopants of a second conductivity type into each pixel in the substrate layer. Each photodetector implant is performed with a different energy than the other photodetector implants in the series.

REFERENCES:
patent: 2004/0185597 (2004-09-01), Merrill et al.
patent: 2005/0087829 (2005-04-01), Merrill et al.
patent: 2007/0069260 (2007-03-01), Stevens
patent: 2007/0114627 (2007-05-01), Roy et al.
patent: 2007/0131987 (2007-06-01), Kim
patent: 2008/0057612 (2008-03-01), Doan et al.
patent: 2009/0166786 (2009-07-01), Shim
patent: 2010/0006969 (2010-01-01), Park et al.
patent: 2010/0102206 (2010-04-01), Cazaux et al.
patent: 2010/0327392 (2010-12-01), McCarten et al.
patent: 2010/0330728 (2010-12-01), McCarten et al.
patent: 1 542 286 (2005-06-01), None
patent: WO 02/27804 (2002-04-01), None
Chung-Wei Chang et al., “High Sensitivity of Dielectric Films Structure for Advanced CMOS Image Sensor Technology”, 2007 International Image Sensor Workshop, pp. 207-210.
PCT International Search Report and the Written Opinion of the Int'l Searching Authority for PCT/US2010/060368, filed Dec. 15, 2010, mailed Apr. 29, 2011 (12 pgs.).

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