Coating processes – Coating by vapor – gas – or smoke – Metal coating
Patent
1998-07-21
2000-12-26
Meeks, Timothy
Coating processes
Coating by vapor, gas, or smoke
Metal coating
42725523, C23C 1618
Patent
active
061655554
ABSTRACT:
A chemical vapor deposition apparatus and a copper film formation method are disclosed. The chemical vapor deposition apparatus includes a process gas delivery unit including a first storing unit using a liquid deposition source, a delivery unit for transferring a liquid deposition source in the first storing unit to an evaporator, and an evaporator for vaporizing the liquid deposition source transferred from the delivery unit and supplying a process gas; and a reaction chamber for receiving the process gas from the process gas delivery unit and deposition a predetermined thin film on a wafer or substrate mounted therein.
REFERENCES:
patent: 4948623 (1990-08-01), Beach et al.
patent: 5087485 (1992-02-01), Cho
patent: 5098516 (1992-03-01), Norman et al.
patent: 5462014 (1995-10-01), Awaya et al.
patent: 5744192 (1998-04-01), Nguyen et al.
Choi et al., Appl. Phys. lett. vol. 68, No. 7, pp. 1017-1018, Feb. 1996.
Hochberg et al., Conference Proceedings, ULSI-X, Materials Research Society, pp. 79-86, 1995 (no month).
Shin et al., Mat. Res. Soc. Symp. Proc., vol. 427, pp. 219-223., 1996 (no month).
Low-Temperature Metal-Organic Chemical Vapor Deposition (LTMOCVD) of Device-Quality Copper Films for Microelectronic Applications; Alain E. Kaloyeros, Aiguo Feng; Jonathan Garhart; Kenneth C. Brooks; Sumanta K. Ghosh; Arjun N. Saxena and Fred Luehrs; vol. 19, No. 3 1990; pp. 271-276. (no month).
Film Growth Kintics of Chemical Vapor Deposition of Copper From Cu(HFA).sub.2 ; Do-Heyoung Kim; Robert H. Wentorf and William N. Gill; vol. 140, No. 11, Nov. 1993; pp. 3267-3272.
Growth and Resistivity Behavior of Copper Film by Chemical Vapor Deposition; E.S. Choi, S.K. Park and Hong H. Lee; vol. 143, No. 2, Feb. 1996; pp. 624-627.
Growth of Copper Films on Sputtered-TiN Surfaces by Metallorganic Chemical Vapour Deposition From (hfac)Cu.sup.(1) (VTMS); Ho-Young Yoen, Young-Bae Park and Shi-Woo Rhee; 1997; pp. 189-194. (no month).
Baek Jong Tae
Jun Chi Hoon
Kim Youn Tae
Electronics and Telecommunications Research Institute
Meeks Timothy
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