Method for forming contacts to semiconductor devices

Details Method for forming contacts to semiconductor devices Method for forming contacts to semiconductor devices

1977-02-18

1978-08-22

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

204 32S, C25D 502, C25D 712

Patent

active

041087380

ABSTRACT:
A Schottky barrier semiconductor device and process for making same is described wherein edge breakdown is avoided by making the rectifying contact in a curved depression in an epitaxial active layer having a nonuniform doping profile. The depression is formed by anodizing a portion of the epitaxial layer and etching the anodic oxide. Etching and electroplating of the contact are done in the same solution to avoid contamination of the metal-semiconductor interface.

REFERENCES:
patent: 2846346 (1958-08-01), Bradley
patent: 2854387 (1958-09-01), Zimmerman
patent: 3161576 (1964-12-01), Teichner
patent: 3397450 (1968-08-01), Bittman et al.
patent: 3476984 (1969-11-01), Tibol
patent: 3636417 (1972-01-01), Kimura

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