Fishing – trapping – and vermin destroying
Patent
1991-12-23
1993-07-20
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437196, H01L 21283, H01L 21285
Patent
active
052293246
ABSTRACT:
A method for making an adhesive ohmic contact to a p-type semiconductor metal substrate or layer (10) comprises tin and lead. The contact preferably includes a tin/lead film (24) approximately 2000 .ANG. in thickness. The p-type semiconductor compound contains mercury and, while described in conjunction with Hg.sub.1-x Cd.sub.x Te, other elements exhibiting group II and group VI chemical behavior and properties may be used A cap layer (30) is deposited over film (24), followed by insulating layer (32). Via (34) is then formed and, to complete contact (50), a metal (36) is deposited inside via (34).
REFERENCES:
patent: 4286278 (1981-08-01), Lorenze, Jr. et al.
patent: 4377904 (1983-03-01), Chapman et al.
patent: 4439912 (1984-04-01), Pollard et al.
patent: 4456630 (1984-06-01), Basol
patent: 4766084 (1988-08-01), Bory et al.
patent: 4784973 (1988-11-01), Stevens et al.
E. W. Hearn et al., IBM T.D.B., vol. 12, No. 3 Aug. 1969, p. 474.
"Type conversion of (Hg,Cd)Te induced by the redistribution of residual acceptor impurities", J. Vac. Sci. Technol. A 3(1) Jan./Feb. 1985, J. Tregilgas, J. Beck, & B. Gnade.
"The Growth of CdHgTe by Metalorganic Chemical Vapour Deposition for Optical Communication Devices", Journal of Crystal Growth 86 (1988) by J. Thompson, P. Mackett and G. T. Jenkin.
"Properties of sputtered mercury telluride contacts on p-type cadmium telluride", A. Zozime and C. Vermeulin, Revue Phys. Appl. 23 (1988) 1825-1835.
"Resistance and 1/f noise of Au, Al, and Ge contacts to (Hg,Cd)Te", J. Appl. Phys. 67(10), May 15, 1990 by W. A. Beck, G. D. Davis & A. C. Goldberg.
"Properties of Electroless Gold Contact on p-type Cadmium Telluride", J. Appl. Phys., vol. 54, No. 6, Jun. 1983, A. Musa, J. P. Ponpon, J. J. Grob, M. Hage-Ali, R. Stuck, and P. Siffert.
"Studies of Au Ohmic Contacts to p-type Hg.sub.1-x Cd.sub.x Te", V. Krishnamurthy, A. Simmons and C. R. Helms.
Simmons Arturo
Turner Arthur M.
Chaudhuri Olik
Graybill David E.
Kesterson James C.
Pylant Chris D.
Stoltz Richard A.
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