Method for forming contacts in semiconductor devices

Details Method for forming contacts in semiconductor devices Method for forming contacts in semiconductor devices

1994-10-21

1996-06-18

Fourson, George

Fishing, trapping, and vermin destroying

437228, H01L 2144

Patent

active

055277381

ABSTRACT:
There is disclosed a method for forming a contact in a semiconductor device wherein a contact material is contacted with an area of a first conductive film between second conductive film patterns which are insulated with the first conductive film and closely adjacent to each other. The method comprises the steps of contacting with the first conductive film a first contact mediator passing by the second conductive film patterns, in a self-alignment manner, contacting a second contact mediator with a predetermined area of the first contact mediator, forming a conductive film spacer at a side wall of the second contact mediator with the contact mediator being patterned, and forming the contact material on the contact mediator.

REFERENCES:
patent: 4962060 (1990-10-01), Silwa et al.
patent: 5019527 (1991-05-01), Ohshima et al.
patent: 5331116 (1994-07-01), Haslam et al.

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