Method for forming contacts in semiconductor device

Details Method for forming contacts in semiconductor device Method for forming contacts in semiconductor device

1995-08-07

1997-01-21

Quach, T. N.

Fishing, trapping, and vermin destroying

437195, 437246, 427124, H01L 21283

Patent

active

055959369

ABSTRACT:
A method for forming contacts of a semiconductor device, capable of simultaneously forming metal plugs having a uniform thickness in contact holes respectively formed at P.sup.+ and N.sup.+ impurity-diffused regions of a semiconductor substrate, thereby minimizing the formation of poor contacts and simplifying the formation of contacts. The method includes the steps of forming a metal pad having a small thickness only at the N.sup.+ impurity-diffused region, where a severe eroding reaction occurs, compared to the P.sup.+ impurity-diffused region, by use of a reacting gas at a low temperature, and then depositing tungsten on all contact regions by use of reacting gases at a high temperature.

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