Fishing – trapping – and vermin destroying
Patent
1995-01-25
1996-07-23
Quach, T. N.
Fishing, trapping, and vermin destroying
437193, 437228S, 437984, H01L 2146
Patent
active
055389228
ABSTRACT:
A contact is formed in a semiconductor device (10), independent of underlying topography or pitch. In one method of the present invention, an insulating layer (18) is deposited over a semiconductor substrate (12). An etch stop layer (20) is deposited over the insulating layer. A frame structure (22) is formed on the etch stop material and defines at least one contact region (23 and/or 25) within which the etch stop material is exposed. The exposed portions of the etch stop material are removed from the contact region to expose a portion of the insulating layer. The exposed portion of the insulating layer is then anisotropically etched and at least one contact (30 and/or 32) is formed in the contact region. Depending on where the contact region is positioned, either a self-aligned contact or a non-self-aligned contact may be formed, or both types of contacts may be formed simultaneously.
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Cooper Kent J.
Lin Jung-Hui
Mazure Carlos A.
Nguyen Bich-Yen
Ray Wayne J.
Cooper Kent J.
Motorola Inc.
Quach T. N.
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