Etching a substrate: processes – Forming or treating electrical conductor article – Forming or treating of groove or through hole
Patent
1993-08-23
1995-06-13
Breneman, R. Bruce
Etching a substrate: processes
Forming or treating electrical conductor article
Forming or treating of groove or through hole
437180, 437194, 437228, 216 38, B44C 122
Patent
active
054239397
ABSTRACT:
According to the present invention, a method is provided for forming contact vias in an integrated circuit. Initially, a first protective layer is formed on an insulating layer, and an opening is created through the insulating layer where a contact is to be made. A conductive layer is deposited over the protective layer and partially fills the opening, forming a conductive plug in the opening. A second protective layer is then formed over the conductive plug. Portions of the conductive layer which were formed over the first protective layer are removed. During removal of those portions of the conductive layer, the second protective layer protects the conductive plug from damage. The first and second protective layers are then removed, leaving the conductive plug in the opening in the insulating layer. A conductive contact can now be made by depositing a second conductive layer over the conductive plug.
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C. Hausamann & P. Mokrisch, "The dependence of Oxide & SOG Etch rates on their area ratio", International IEEE, ULSI, pp. 293-298.
Wolf, "Silicon Processing for the VLSI Fra", vol. 2, pp. 188-189, p. 111.
Bryant Frank R.
Nguyen Loi N.
Breneman R. Bruce
Chang Joni Y.
Hill Kenneth C.
Jorgenson Lisa K.
Robinson Richard K.
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