Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-12-20
2005-12-20
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S219000, C438S221000, C438S295000, C438S296000, C438S404000, C438S420000, C438S433000, C438S451000, C438S519000, C438S523000, C438S527000, C438S532000, C438S533000, C438S652000, C438S675000, C438S761000, C438S914000, C438S961000
Reexamination Certificate
active
06977204
ABSTRACT:
The present invention provides a method for forming a contact plug in a semiconductor device capable of preventing an increase of contact resistance caused by a decrease in dopant concentration and suppressing diffusions of dopants implanted into the contact. The dopants are doped in a manner to allow the conductive layer to have different doping distributions with respect to a thickness. Particularly, the dopants are doped until reaching a target deposition thickness by gradually increasing a concentration of the dopants from a first concentration to a second concentration for an interval from an initial deposition of the conductive layer to the target deposition thickness, and the second concentration is consistently maintained throughout for an interval from the target deposition thickness to a complete deposition thickness.
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Fourson George
Garcia Joannie Adelle
Hynix / Semiconductor Inc.
Mayer Brown Rowe & Maw LLP
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