Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2007-04-03
2007-04-03
Trinh, Minh (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S831000, C029S842000, C029S846000, C029S874000, C174S262000
Reexamination Certificate
active
10755983
ABSTRACT:
Disclosed is a method of forming bump electrodes on wired circuit boards. A high-concentration impurity Si template doped with boron and having a pit formed therein is prepared. A plated resist is formed on the high-concentration impurity Si template and an opening is formed at the position of the pit. Then, an electric field is applied to the high-concentration impurity Si template and Au is buried in the opening in the plated resist to form a Au-plated buried layer. An electrode pad is formed on a semiconductor chip. With the plated resist separated from the high-concentration impurity Si template, the electrode pad of the semiconductor chip is aligned with the Au-plated buried layer and is bonded by thermo-compression bonding. The Au-plated buried layer is transferred to the electrode pad to form an Au bump on the semiconductor chip.
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Akimoto Yuji
Kouta Hikaru
Oda Mikio
Takahashi Nobuaki
Hayes & Soloway P.C.
NEC Electronics Corporation
Trinh Minh
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