Method for forming connections of a semiconductor device on base

Details Method for forming connections of a semiconductor device on base Method for forming connections of a semiconductor device on base

1978-12-19

1980-08-26

Mehr, Milton S.

Metal fusion bonding

Process

With shaping

228 45, H01L 2160

Patent

active

042191432

ABSTRACT:
Method for welding fine wires to connecting terminations born by the base of a semiconductor device, using a tool for welding and cutting the wire in the form of a tube (9) which acts by its end face (11) containing the wire (12) to be welded, of which the outer strand (13) is to be welded to the termination (6), an incipient rupture (16) being formed by the inner angle (17) of the tube, and a limited flattening (H) being obtained by contact (40) between part of the end face of the tube and the termination, the value (H) being determined by the choice of an angle (P) created between the termination (6) and the end face (11) of the tube.

REFERENCES:
patent: 3305157 (1967-02-01), Pennings
patent: 3623649 (1971-11-01), Keisling
patent: 3643321 (1972-02-01), Field et al.

Affiliated with

Also associated with

Rating

Method for forming connections of a semiconductor device on base does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming connections of a semiconductor device on base, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming connections of a semiconductor device on base will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1302496