Method for forming conductive material in opening and...

Details Method for forming conductive material in opening and... Method for forming conductive material in opening and...

2005-04-26

2005-04-26

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S396000, C438S253000, C438S256000

Reexamination Certificate

active

06884692

ABSTRACT:
Method and structure use support layers to assist in, for example, planarization processes to form conductive materials (e.g., a Group VIII metal) in an opening. Further, for example, such method and structure may use a Group VIII metal as an etch stop or end point for the planarization process with subsequent etching to remove undesired portions of the Group VIII metal.

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