Method for forming conducting metal layer on inorganic substrate

Details Method for forming conducting metal layer on inorganic substrate Method for forming conducting metal layer on inorganic substrate

1989-10-03

1990-10-23

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

20419215, C23C 1434

Patent

active

049649620

ABSTRACT:
A method for forming a conducting metal layer on an inorganic substrate is to heat the inorganic substrate accommodated in a vacuum vessel of sputtering device in which a high degree of vacuum is attained, to lead into the vacuum vessel a discharge gas as regulated to be at a predetermined pressure, to apply a high frequency power with the inorganic substrate made as a target, to interrupt the power to regulate the discharge gas to be at a predetermined pressure relatively low, and to apply DC power with a conductive metal member made as a target for thereby forming the conducting metal layer on the inorganic substrate. The metal layer formation on the inorganic substrate is thereby simplified enough for improving the producibility in industrial scale and is still capable of attaining a satisfactory bonding strength between the metal layer and the substrate.

REFERENCES:
patent: 3835007 (1974-09-01), Ferat et al.
patent: 3941692 (1976-03-01), Tanaka et al.
patent: 3945903 (1976-03-01), Svendor et al.
patent: 4342632 (1982-08-01), Heim et al.
patent: 4597828 (1986-07-01), Tadros
patent: 4647361 (1987-03-01), Bauer
patent: 4702941 (1987-10-01), Mitchell et al.
Article: "Vakuum-Technik", vol. 37, No. 6, 1988 (pp. 162-175) High-Rate Sputtering Technology and its Application in Different Industrial Fields.

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