Method for forming charge storage electrodes of semiconductor de

Details Method for forming charge storage electrodes of semiconductor de Method for forming charge storage electrodes of semiconductor de

1995-08-09

1997-11-25

Thomas, Tom

Fishing, trapping, and vermin destroying

437 52, 437919, H01L 218242

Patent

active

056912277

ABSTRACT:
A method for forming charge storage electrodes, involving the steps of patterning a first polysilicon layer in contact with a semiconductor substrate through charge storage electrode contact holes by use of a charge storage electrode mask, selectively growing an oxide film over a portion of interlayer insulating film exposed after the patterning such that the selectively-grown oxide film is upwardly protruded beyond the upper surface of the charge storage electrode mask, removing the charge storage electrode mask, forming a second polysilicon layer over the resulting structure, patterning the second polysilicon layer such that the second polysilicon layer has portions separated from one another, thereby forming charge storage electrodes each constituted by the pattern of the first polysilicon layer in contact with the semiconductor substrate through each corresponding charge storage electrode contact hole and the pattern of the second polysilicon layer disposed over the first polysilicon layer pattern while being in contact with the first polysilicon layer pattern, the second polysilicon layer pattern having bent portions. In accordance with the present invention, therefore, it is possible to obtain an increased surface area and to achieve improvements in yield and reliability of operation.

REFERENCES:
patent: 5449635 (1995-09-01), Jun
patent: 5464787 (1995-11-01), Ryou

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