Method for forming capacitor of semiconductor device

Details Method for forming capacitor of semiconductor device Method for forming capacitor of semiconductor device

2007-06-08

2010-06-01

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S396000

Reexamination Certificate

active

07727850

ABSTRACT:
A method for forming a capacitor of a semiconductor device includes forming a first capacitor in a storage node contact region to form a two-stage structured capacitor, thereby increasing the height and the capacitance of the capacitor.

REFERENCES:
patent: 6821846 (2004-11-01), Shao et al.
patent: 2003/0162353 (2003-08-01), Park
patent: 2005/0269618 (2005-12-01), Shin et al.
patent: 10-2001-0018071 (2001-03-01), None
patent: 10-2004-0002221 (2004-01-01), None
patent: 10-2005-0052874 (2005-06-01), None
patent: 10-2005-0062919 (2005-06-01), None
patent: 10-2005-0064894 (2005-06-01), None

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