Method for forming capacitor of semiconductor device

Details Method for forming capacitor of semiconductor device Method for forming capacitor of semiconductor device

2005-05-04

2009-10-27

Fulk, Steven J (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S253000, C438S785000, C257S306000, C257SE21647

Reexamination Certificate

active

07608517

ABSTRACT:
Disclosed is a method for forming a capacitor of a semiconductor device, which can secure wanted charging capacity and also improve leakage current characteristics. The method comprises the steps of: forming a storage electrode on a semiconductor substrate; forming a dielectric layer formed of Ti(1-x)TbxO on the storage electrode; and forming a plate electrode on the dielectric layer formed of Ti(1-x)TbxO.

REFERENCES:
patent: 4927670 (1990-05-01), Erbil
patent: 6093944 (2000-07-01), VanDover
patent: 6251720 (2001-06-01), Thakur et al.
patent: 6790791 (2004-09-01), Ahn et al.
patent: 2003/0100162 (2003-05-01), Joo
patent: 2004/0009679 (2004-01-01), Yeo et al.
patent: 2004/0043541 (2004-03-01), Ahn et al.
patent: 2005/0130326 (2005-06-01), Lee et al.
patent: 1192985 (2002-04-01), None

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