Method for forming capacitor of semiconductor device

Details Method for forming capacitor of semiconductor device Method for forming capacitor of semiconductor device

2005-07-01

2009-12-08

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C257S304000, C257S311000, C257S295000, C257S750000, C257S751000, C257S306000, C257S303000, C257S310000, C257S763000, C438S396000, C438S694000, C438S710000, C438S712000, C438S722000, C438S240000, C438S239000, C438S595000, C438S387000, C438S253000, C438S628000, C438S636000, C438S644000, C438S654000, C438S680000

Reexamination Certificate

active

07629221

ABSTRACT:
Disclosed is a method for forming a capacitor of a semiconductor device. In such a method, a mold insulating layer is formed on an insulating interlayer provided with a storage node plug, and the mold insulating layer is etched to form a hole through which the storage node plug is exposed. Next, a metal storage electrode with an interposed WN layer is formed on a hole surface including the exposed storage node plug and the mold insulating layer is removed. Finally, a dielectric layer and a plate electrode are formed in order on the metal storage electrode.

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Korean Patent Gazette, Oct. 30, 2006.

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