Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2006-05-02
2006-05-02
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S240000, C438S253000, C438S685000, C438S785000
Reexamination Certificate
active
07037801
ABSTRACT:
Disclosed is a method for forming a capacitor of a semiconductor device, which can ensure charging capacity required as well as an excellent leakage current characteristic. In such a method, a storage electrode consisting of TiN is formed on a semiconductor substrate. Then, a first HfO2 thin film, an HfxAlyOz thin film and a second HfO2 thin film are successively deposited on the storage electrode using Atomic layer Deposition (ALD) processes to form an HfO2/HfxAlyOz/HfO2 dielectric film. Finally, a plate electrode consisting of TiN is formed on the HfO2/HfxAlyOz/HfO2 dielectric film.
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Hong Kwon
Kil Deok Sin
Fourson George
Garcia Joannie Adelle
Hynix / Semiconductor Inc.
Ladas & Parry LLP
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