Method for forming capacitor of semiconductor device

Details Method for forming capacitor of semiconductor device Method for forming capacitor of semiconductor device

2006-09-26

2006-09-26

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S389000, C438S397000, C438S398000

Reexamination Certificate

active

07112506

ABSTRACT:
Disclosed is a method for forming a capacitor of a semiconductor device. An etch stop layer, first oxide layer and second oxide layer are sequentially deposited on an insulating interlayer of a substrate. Contact holes through which portions of the etch stop layer are exposed above plugs of the insulating interlayer are formed. The contact holes are cleaned by a cleaning solution having an etching selectivity which is higher for the first oxide layer than for the second oxide layer, thereby enlarging lower portions of the contact holes. A spacer nitride layer is formed on surfaces of the contact holes and the second oxide layer. Portions of the spacer nitride layers located on the second oxide layer and above the plugs together with portions of the etch stop layer located on the plugs are removed. A double polysilicon layer is formed on the spacer nitride layer segments.

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