Method for forming capacitor in semiconductor device

Details Method for forming capacitor in semiconductor device Method for forming capacitor in semiconductor device

2008-03-04

2008-03-04

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S387000

Reexamination Certificate

active

07338878

ABSTRACT:
Upon a deep-hole capacitor fabrication, a hole is formed in an insulator layer, and then a film of a conductive material is formed on the insulator layer and on the whole inner surface of the hole. The film and the insulator layer are exposed to a chemical-mechanical polishing process to form a lower electrodes of the conductive material. A capacitor dielectric on the lower electrode is formed, and then an upper electrode is formed on the capacitor dielectric.

REFERENCES:
patent: 5943581 (1999-08-01), Lu et al.
patent: 6008103 (1999-12-01), Hoepfner
patent: 6215187 (2001-04-01), Ooto et al.
patent: 6284593 (2001-09-01), Mandelman et al.
patent: 6700153 (2004-03-01), Oh et al.
patent: 6911364 (2005-06-01), Oh et al.
patent: 6967137 (2005-11-01), Belyansky et al.
patent: 2005/0067630 (2005-03-01), Zhao
patent: 2006/0086951 (2006-04-01), Iijima et al.
patent: 11-204751 (1999-07-01), None

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