Method for forming capacitor electrode having jagged surface

Details Method for forming capacitor electrode having jagged surface Method for forming capacitor electrode having jagged surface

1995-10-31

1999-01-12

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, 438255, 438396, 148DIG14, H01L 2120

Patent

active

058588531

ABSTRACT:
In a method for forming a capacitor, after preparing a substrate having at least one device area thereon, an amorphous silicon film containing one type of dopant is formed on the device area. A mask layer comprising mask islands is formed and distributed on a surface of the amorphous silicon film. The surface of the amorphous silicon is dry-etched by using the mask layer as a selective etching mask to produce a jagged surface having a lot of protrusions. After forming the jagged surface, the amorphous silicon film is changed into a polycrystalline silicon film serving as a storage electrode. Finally, a dielectric film and then another storage electrode are formed sequentially on the jagged surface of the storage electrode.

REFERENCES:
patent: 5110752 (1992-05-01), Lu
patent: 5182232 (1993-01-01), Chhabra et al.
patent: 5256587 (1993-10-01), Jun et al.
patent: 5290729 (1994-03-01), Hayashide et al.
patent: 5302540 (1994-04-01), Ko et al.
patent: 5318920 (1994-06-01), Hayashide
patent: 5387531 (1995-02-01), Rha et al.
patent: 5427974 (1995-06-01), Lur et al.
patent: 5466626 (1995-11-01), Armacost et al.
patent: 5474949 (1995-12-01), Hirao et al.
patent: 5474950 (1995-12-01), Kim
patent: 5543347 (1996-08-01), Kawano et al.
Watanabe et al., "Hemispherical Grained Silicon (HSG-Si) Formation on In-Situ Phosphorous . . . Method", Extd. Abs. of the 1992 Int'l. Conf. on Solid State Devs. & Mtls., Tsukuba, 1992, pp. 422-424.
Watanabe et al., "Device application and structure observation for hemispherical-grained Si", J. Appl. Phys., vol. 71, No. 7, Apr. 1, 1992, pp. 3538-3543.

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