Method for forming capacitor

Details Method for forming capacitor Method for forming capacitor

2005-04-05

2005-04-05

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

C438S239000, C438S240000, C438S243000, C438S253000, C438S386000, C438S387000, C438S396000

Reexamination Certificate

active

06875667

ABSTRACT:
A capacitor is provided that is optimal for use in DRAM and has high dielectric constant, and allows leakage current flowing therethrough to be maintained at a low level, and further, permits dependence of the leakage current on temperatures to be small. That is, capacitor openings are formed in an inter layer silicon oxide layer and a TiN film is patterned so that TiN films are left only within the openings to form lower electrodes within the openings. Subsequently, a Zr- and/or Hf-containing oxide film (represented by the formula, multicomponent Zr.sub.x.Hf.sub.1-x.O.sub.2 film (0≦x≦1)) formed from a metal-containing organic compound as a reactant and a Ti-containing oxide film are laminated to form capacitor dielectrics. After deposition of the Zr- and/or Hf-containing oxide film, the Zr- and/or Hf-containing oxide film is subjected to heat treatment to be performed in an oxidizing ambient to remove residual carbon being retained in the Zr- and/or Hf-containing oxide film, leading to formation of a capacitor that is optimal for use in DRAM and has high dielectric constant, and allows leakage current flowing therethrough to be maintained at a low level.

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