Metal working – Piezoelectric device making
Reexamination Certificate
2006-12-26
2006-12-26
Tugbang, A. Dexter (Department: 3729)
Metal working
Piezoelectric device making
C029S594000, C029S830000, C029S831000, C029S835000, C029S846000, C029S847000, C310S311000
Reexamination Certificate
active
07152289
ABSTRACT:
A method for forming a device on a substrate of <110> silicon includes forming a first conductive layer onto the substrate, and forming a piezoelectric layer on the first portion of a first conductive layer. A second electrode is formed on the piezoelectric layer, and a backside portion of the substrate under the piezoelectric layer and the first conductive layer is removed using a crystal orientated dependent etch.
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Ma Qing
Wang Li-Peng
Yankovich Israel
Nguyen Tai Van
Schwegman Lundberg Woessner & Kluth P.A.
Tugbang A. Dexter
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