Method for forming bipolar transistor having a reduced base tran

Details Method for forming bipolar transistor having a reduced base tran Method for forming bipolar transistor having a reduced base tran

1997-08-21

1998-10-20

Niebling, John

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

438348, 438349, 438366, 438370, 148DIG10, 148DIG11, 257592, H01L 21331

Patent

active

058245898

ABSTRACT:
A bipolar transistor has a performance and high reliability, which are by enhancing a withstand voltage between an emitter and a base. The bipolar transistor includes a first impurity diffusion layer in a semiconducting substrate, a first conductive film connected to the first diffusion layer, and an opening disposed in the first conductive film. A second impurity diffusion layer is formed in a portion, exposed from the opening portion, of the semiconducting substrate and is connected to the first impurity diffusion layer. A third impurity diffusion layer is formed so as to contain the second diffusion layer and side walls are formed on the side walls of the opening. A fourth impurity diffusion layer is formed in the third impurity diffusion layer in the opening surrounded by the side walls.

REFERENCES:
patent: 5217909 (1993-06-01), Bertagmolli
patent: 5624854 (1997-04-01), Taft et al.
patent: 5677209 (1997-10-01), Shon et al.

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