Method for forming an ultrafine metal pattern using an electron

Details Method for forming an ultrafine metal pattern using an electron Method for forming an ultrafine metal pattern using an electron

1991-05-22

1992-09-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437229, 437928, 437935, 148DIG46, 430323, 430324, 2504921, 2504923, H01L 2100, H01L 2102, H01L 21306

Patent

active

051478234

ABSTRACT:
In a method for forming a pattern, by selectively irradiating a charged particle beam onto a substrate in an atmosphere containing a raw material gas, a resist pattern comprising a material which is produced on the substrate from the raw material gas is formed, wherein a pressure of the raw material gas is set to 10.sup.-7 to 10.sup.-5 Torr, an accelerating voltage of the charged particle beam is set to 0.5 to 6 kV, and a beam current of the charged particle beam is set to 10.sup.-13 to 10.sup.-7 A. Thus, a resist pattern of an ultrafine width can be stably formed in a relatively short time.
Further, in a method for forming a pattern, by irradiating a charged particle beam onto a substrate in an atmosphere containing a gaseous negative type resist, a cross-linking reaction of the negative type resist molecules adsorbed on the surface of the substrate is caused, and a pattern comprising the negative type resist molecules which caused the cross-linking reaction is formed, so that a pattern which has an ultrafine width and can be easily removed by the wet process can be formed.

REFERENCES:
patent: 4152478 (1979-05-01), Takagi
patent: 4197332 (1980-04-01), Broers et al.
patent: 4357183 (1982-11-01), Fan et al.
patent: 4566937 (1986-01-01), Pitts
Wolf, S., Silicon Processing for the VLSI Era, vol. 1, pp. 420-421, 1986, Lattice Press.
Gangal, S., Plasma-Poly. Electron Beam Resist Prepar. from Methyl Metacrylate Using Various Carrier Gases, pp. 341-350, Thin Solid Films, 149 (1987).
Morrissey, J., Electron-Beam Contaminantion as a Mask, IBM Tech. Discl. Bull., vol. 20, No. 6, Nov. 1977, p. 2212.
Japanese Patent Abstract, vol. 10, No. 150, (E-408) [2207], May 31, 1986, (11) 61-10241 (A).
IBM Technical Disclosure Bulletin, vol. 20, No. 6 Nov. 1977.

Affiliated with

Also associated with

Rating

Method for forming an ultrafine metal pattern using an electron does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming an ultrafine metal pattern using an electron , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming an ultrafine metal pattern using an electron will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-736488