Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1992-03-26
1993-07-06
Beck, Shrive
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505730, 505702, 505701, 505731, 427 62, 427 63, 4274192, 4274193, 20419224, B05D 512, C23C 1434
Patent
active
052253988
ABSTRACT:
A [100] oriented ZrO.sub.2 thin film is formed on selected regions of a [100] deposition surface of a silicon substrate, and a Y.sub.2 O.sub.3 thin film deposited on the ZrO.sub.2 thin film and exposed regions of the deposition surface of the silicon substrate. A Y-Ba-Cu type compound oxide superconducting thin is deposited on the Y.sub.2 O.sub.3 thin film. The Y-Ba-Cu type compound oxide superconducting thin film positioned above the ZrO.sub.2 thin film is crystal-grown in a [001] orientation, and the Y-Ba-Cu type compound oxide superconducting thin film is crystal-grown in a [110] orientation in the other region.
REFERENCES:
Harada et al, "Y-Ba-Cu-O Thin Film on Si Substrate", Jpn. J. Appl. Phys. lett. 27(8) Aug. 1988 pp. L1524-1526.
Ogale et al, "Pulsed excimer laser deposition Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x Superconductor films on silicon with laser-deposited Y-Z.sub.r O.sub.2 buffer layer" Appl. Phys. lett. 57(17) Oct. 1990 pp. 1805-1807.
Myoren et al, "Crystalline Qualities and critical current densities of As-Grown Ba.sub.2 YCu.sub.3 O.sub.x thin films on silicon with buffer layers", Jpn. J. Appl. Phys. lett. 29(6) Jun. 1990 pp. L955-L957.
Hideo Itozaki
Nakanishi Hidenori
Shikata Shin-ichi
Beck Shrive
King Roy V.
Sumitomo Electric Industries Ltd.
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