Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-07-24
1993-07-06
Beck, Shrive
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505730, 505731, 505732, 505734, 427 62, 4271263, 427596, 427561, 427529, 4272553, 20419224, B05D 512, C23C 1600, C23C 1400
Patent
active
052253961
ABSTRACT:
A method for forming an oxide superconducting film is disclosed. A substrate member comprising an oxygen ion conductor and a material provided thereon having oxygen permeability and good fitting of lattice constant to the oxide superconducting film is prepared, and then an oxide superconducting film is formed on the substrate member. During the formation of the superconducting film, electric current is made to flow through the substrate member, whereby oxygen is supplied to the superconducting film.
REFERENCES:
patent: 4950642 (1990-08-01), Okamoto et al.
Beck Shrive
King Roy V.
Semiconductor Energy Laboratory Co,. Ltd.
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