Method for forming an opto-electronic device

Details Method for forming an opto-electronic device Method for forming an opto-electronic device

2008-03-11

2008-03-11

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C257SE21700, C257SE21505, C438S032000

Reexamination Certificate

active

10714858

ABSTRACT:
A method for forming an opto-electronic device through low temperature processes is provided. An active layer is bonded to a substrate by a common adhesive to maintain or increase the luminous efficiency of the opto-electronic because the electric conductive elements of the opto-electronic are formed on the active layer by a solid phase regrowth process through a low temperature processe.

REFERENCES:
patent: 6756289 (2004-06-01), Nakagawa et al.
patent: 6825502 (2004-11-01), Okazaki et al.
patent: W092/02037 (1992-06-01), None
L. C. Wang, et al. “Low Temperature-Processed (150-175° C.) Ge/Pd-Based Ohmic Contacts (ρC˜1×10−6Ω cm2) to η-GaAs”-Appl. Phys. Lett., pp. 67-Jul. 24, 1995.

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