Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2007-06-12
2007-06-12
Rosasco, S. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S394000
Reexamination Certificate
active
10789994
ABSTRACT:
An opening is formed in a light-absorbing layer on a mask by applying a second resist above a first resist on the layer. A first exposure step with subsequent development of the second resist leads to the formation of a first opening in the developed second resist. The first resist is uncovered on an area within the opening. A second exposure step is performed by irradiation of the mask in a second segment, which is laterally offset with respect to the first opening, so that an incomplete portion of the area of the uncovered first resist is exposed within the opening. After a further development step and an etching step with formation of a second opening in the developed first resist with a transfer of the portion into the light-absorbing layer, this opening has a diameter smaller than both the first and the second segment.
REFERENCES:
patent: 6764808 (2004-07-01), Okoroanyanwu et al.
patent: 2003/0031956 (2003-02-01), Wijnaendts et al.
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
Rosasco S.
LandOfFree
Method for forming an opening in a light-absorbing layer on... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming an opening in a light-absorbing layer on..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming an opening in a light-absorbing layer on... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3856581