Method for forming an ohmic contact

Details Method for forming an ohmic contact Method for forming an ohmic contact

1975-04-30

1976-05-25

Weiffenbach, Cameron K.

Coating processes

Electrical product produced

Condenser or capacitor

357 67, 357 71, 427 91, 427125, 427380, 427383, B05D 512

Patent

active

039595226

ABSTRACT:
Gold is deposited onto a heated surface of N type semiconductor material composed of either gallium arsenide, gallium phosphide, aluminum gallium arsenide or aluminum gallium phosphide. The surface of the gallium compound is cooled to room temperature whereupon tin is deposited onto the gold. The semiconductor material is then reheated until the tin alloys with and through the gold into the material. A solderable surface may be applied to the semiconductor material by applying a film nickel and then a film of gold onto the alloyed surface.

REFERENCES:
patent: 3349476 (1967-10-01), Pilkuhn et al.
patent: 3636618 (1972-01-01), Herzog et al.
patent: 3821785 (1974-06-01), Rose
patent: 3850688 (1974-11-01), Halt

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