Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-04-26
2005-04-26
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S028000, C438S033000
Reexamination Certificate
active
06884646
ABSTRACT:
An LED epitaxial structure and a first electrode layer are formed on a provisional substrate in sequence. Then, a metallic permanent substrate is formed on the first electrode layer, and the provisional substrate is removed to expose a surface of the LED epitaxial structure. A plurality of second electrodes is formed on the surface of the LED epitaxial structure. Finally, the metallic permanent substrate, the first electrode layer, and the LED epitaxial structure are diced to form a plurality of LED devices.
REFERENCES:
patent: 20030189212 (2003-10-01), Yoo
patent: 20040077114 (2004-04-01), Coman et al.
patent: 20040079951 (2004-04-01), Horng et al.
Chang Yuan-Hsiao
Chen Chien-An
Wu Bor-Jen
Wu Mei-Hui
Everhart Caridad
Kang Gregory B.
Nath Gary M.
Nath & Associates PLLC
Uni Light Technology Inc.
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