Method for forming an isolating trench with a dielectric...

Details Method for forming an isolating trench with a dielectric... Method for forming an isolating trench with a dielectric...

2008-05-13

2008-05-13

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C257SE21546

Reexamination Certificate

active

07371657

ABSTRACT:
The present invention relates to a method of forming an isolating trench of a semiconductor device with a dielectric material, and to a method of forming an isolating trench in a memory device.

REFERENCES:
patent: 6669799 (2003-12-01), Putnam et al.
patent: 6864151 (2005-03-01), Yan et al.
patent: 6869860 (2005-03-01), Belyansky et al.
patent: 7291533 (2007-11-01), von Schwerin
patent: 2005/0159520 (2005-07-01), Lamb et al.

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