Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2011-03-15
2011-03-15
Banks, Derris H (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S831000, C029S832000, C029S853000, C029S854000
Reexamination Certificate
active
07905013
ABSTRACT:
An iridium oxide (IrOx) nanowire neural sensor array and associated fabrication method are provided. The method provides a substrate with a conductive layer overlying the substrate, and a dielectric layer overlying the conductive layer. The substrate can be a material such as Si, SiO2, quartz, glass, or polyimide, and the conductive layer is a material such as ITO, SnO2, ZnO, TiO2, doped ITO, doped SnO2, doped ZnO, doped TiO2, TiN, TaN, Au, Pt, or Ir. The dielectric layer is selectively wet etched, forming contact holes with sloped walls in the dielectric layer and exposing regions of the conductive layer. IrOx nanowire neural interfaces are grown from the exposed regions of the conductive layer. The IrOx nanowire neural interfaces each have a cross-section in a range of 0.5 to 10 micrometers, and may be shaped as a circle, rectangle, or oval.
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Gao Wei
Hsu Sheng Teng
Ulrich Bruce D.
Zhang Fengyan
Banks Derris H
Law Office of Gerald Maliszewski
Maliszewski Gerald
Nguyen Tai
Sharp Laboratories of America Inc.
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