Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2010-11-24
2011-12-06
Richards, N Drew (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C257SE21008
Reexamination Certificate
active
08071458
ABSTRACT:
The invention discloses a method for forming an interfacial passivation layer on the Ge semiconductor. The supercritical CO2fluids is used to form an interfacial passivation layer between Ge channel and gate insulator layer, and improve the dielectric characteristics of gate insulator after high-temperature thermal annealing process.
REFERENCES:
Liu, P. et al. (Mar. 17, 2010). Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology. Applied Physics Letters, 96, 112902.
Liu et al, Po-Tsun; Effects of Postgate Dielectric Treatment on Germanium-Based Metal-Oxide-Semiconductor Device by Supercritical Fluid Technology; Applied Physics Letters 96, 112902-1-112902-3, American Institute of Physics 2010.
Cheng Szu-Lin
Huang Chen-Shuo
Huang Yi-Ling
Liu Po-Tsun
Nishi Yoshio
Bacon & Thomas PLLC
National Chiao Tung University
Richards N Drew
Shook Daniel
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