Method for forming an interconnect having a penetration limited

Details Method for forming an interconnect having a penetration limited Method for forming an interconnect having a penetration limited

1995-02-13

1997-11-11

Niebling, John

Fishing, trapping, and vermin destroying

437183, 437189, 29846, 29842, H01L 2166

Patent

active

056863179

ABSTRACT:
A method for forming an interconnect for establishing a temporary electrical connection with contact locations (e.g., bond pads) on a semiconductor die is provided. The interconnect includes a substrate (e.g., silicon) having raised contact members that correspond to the contact locations on the die. Each raised contact member includes one or more projections adapted to penetrate the contact locations on the die to a limited penetration depth. The raised contact member and projections are covered with a metal silicide layer formed using a salicide process. The metal silicide layer is in contact with conductive traces formed on the substrate of a highly conductive metal. Alternately the raised contact members and projections can be formed as a metal layer or as a bi-metal stack.

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