Method for forming an integrated trench capacitor

Details Method for forming an integrated trench capacitor Method for forming an integrated trench capacitor

1998-03-11

2000-09-19

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438248, H01L 2120

Patent

active

061211060

ABSTRACT:
A shallow trench capacitor is disclosed that is fabricated by forming a shallow trench in a substrate extending below a surface of the substrate. A dielectric layer having a preselected thickness is grown in the shallow trench, and a polysilicon layer is deposited over the dielectric layer. The polysilicon layer is then planarized down to the nitride or pad layer forming a capacitor. By utilizing a non-critical mask to open up selected regions, isolation structures may then be formed through shallow trench technology.

REFERENCES:
patent: 5776808 (1998-07-01), Muller et al.

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