Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Complementary bipolar transistors
Patent
1997-02-18
1999-02-02
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Complementary bipolar transistors
438340, H01L 218228
Patent
active
058664610
ABSTRACT:
A bipolar power transistor and a low voltage bipolar transistor are combined in an emitter switching or a semibridge configuration in an integrated structure. In a version with non-isolated components, the components of the structure are totally or partially superimposed on each other, partly in a first epitaxial layer and partly in a second epitaxial layer, and the low voltage bipolar transistor is situated above the emitter region of the bipolar power transistor which is thus a completely buried active structure. In a version with isolated components, there are two P+ regions in an N- epitaxial layer. The first P+ region constitutes the power transistor base and encloses the N+ emitter region of the power transistor. The second P+ region encloses two N+ regions and one P+ region, constituting the collector, emitter, and base regions respectively of the low voltage transistor. A metallization on the front of the chip provides a connection between the collector contact of the low voltage transistor and the emitter contact of the power transistor.
REFERENCES:
patent: 3617827 (1971-11-01), Schmitz
patent: 4651410 (1987-03-01), Feygenson
patent: 4889822 (1989-12-01), Musumeci et al.
patent: 5376821 (1994-12-01), Puzzolo et al.
A Power Transisitor with an Integrated Thermal Feedback Mechanism. Blanchard, Richard A., MIT: Jul. 1970.
Paparo Mario
Puzzolo Santo
Zambrano Raffaele
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Nguyen Tuan H.
STMicroelectronics S.r.l.
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