Method for forming an integrated circuit resistor comprising amo

Details Method for forming an integrated circuit resistor comprising amo Method for forming an integrated circuit resistor comprising amo

1995-06-07

1999-03-02

Dang, Trung

Semiconductor device manufacturing: process

Making passive device

438382, 438384, 438385, 438238, H01L 2120

Patent

active

058770593

ABSTRACT:
The device hereof provides an integrated circuit resistor (34) comprising amorphous or noncrystalline semiconducting material. Further advantages can be gained in area by forming the noncrystalline semiconductor resistor in a non-planar fashion (i. e. with a vertical construction) wherein a first electrical contact is made to the resistor on its bottom surface and a second electrical contact is made to the resistor on its top surface.
Other devices, systems and methods are also disclosed.

REFERENCES:
patent: 4868618 (1989-09-01), Kalnitsky et al.
patent: 5012443 (1991-04-01), Ema
patent: 5122857 (1992-06-01), Ikeda et al.
patent: 5198683 (1993-03-01), Sivan
patent: 5200356 (1993-04-01), Tanaka
patent: 5229310 (1993-07-01), Sivan
patent: 5308782 (1994-05-01), Mazure et al.

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