Method for forming an insulator between layers of conductive mat

Details Method for forming an insulator between layers of conductive mat Method for forming an insulator between layers of conductive mat

1978-11-03

1980-11-18

Massie, Jerome W.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29578, 29580, 148174, 156643, 156657, 156662, 204192E, 357 24, 357 59, H01L 2122, H01L 21306

Patent

active

042343623

ABSTRACT:
A method for forming an insulator between conductive layers, such as highly doped polycrystalline silicon, that involves first forming a conductive layer of, for example, polycrystalline silicon on a silicon body having substantially horizontal and substantially vertical surfaces. A conformal insulator layer is formed on the substantially horizontal and substantially horizontal and vertical surfaces. Reactive ion etching removes the insulator from the horizontal layer and provides a narrow dimensioned insulator on the vertical surfaces silicon body. Another conductive layer, which may be polycrystalline silicon, is formed over the insulator. The vertical layer dimension is adjusted depending upon the original thickness of the conformal insulator layer applied.

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